In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

Table 1

Comparison of charge carrier concentrations at constant doping levels.

	x	Cell temperature (°C)	Carrier concentration (cm^−3)
p-AlxGa1−xAs	0.3	770	1.98⋅10^18 ± 1⋅10^16
	0.5	770	1.92⋅10^18 ± 3⋅10^16
	0.9	770	9.58⋅10^17 ± 4⋅10^16
n-AlxGa1−xAs	0.3	185	9.41⋅10^17 ± 7⋅10^16
	0.5	185	9.15⋅10^17 ± 3⋅10^16

It can be clearly seen that the charge carrier concentration decreases with increasing Al contents.