The piezoelectric properties of reactively sputtered ZnO thin films deposited on glass and
silicon substrates were studied in order to assess their potential for the construction of
RF overmoded filters. Films of high crystallographic orientation {002}, as shown by
XRD measurements and SEM observations, and high value of keff2
, calculated with the aid of the BVD model, were obtained after the optimization of the deposition conditions, with highly repetitive properties. Simple devices were designed and constructed on
silicon substrates which showed a quality factor of 1000 without the use of a Bragg
acoustic reflector, and a temperature drift of –30ppm/℃.
