Modelling of an Esaki Tunnel Diode in a Circuit Simulator

Table 1

Esaki tunnel diode parameter table.

Parameter	Description	Default	Units
JS	Saturation current	1×10^−16	A
CT0	Zero bias depletion capacitance	0	F
FI	Built-in barrier potential	0.8	V
GAMA	Capacitance power law parameter	0.5	—
CD0	Zero bias diffusion capacitance	0	F
AFAC	Slope factor of diffusion capacitance	38.696	1/V
R0	Series resistance in forward bias	0	Ω
TAU	Intrinsic depletion layer time constant	0	sec
AREA	Area multiplier	1	—
JV	Valley current	1×10^−4	A
JP	Peak current	1×10^−3	A
VV	Valley voltage	0.5	V
VPK	Peak voltage	0.1	V
A2	Excess current prefactor	30	—
MT	Tunnel current slope factor	−1	—
MX	Excess current slope factor	1	—
MTH	Thermal current slope factor	1	—
TEMP	Temperature	300^∘	K