Comparative Study of <svg style="vertical-align:-4.32007pt;width:41.837502px;" id="M1" height="20.4125" version="1.1" viewBox="0 0 41.837502 20.4125" width="41.837502" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.022,0,0,-.022,.062,14.975)"><path id="x53" d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
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<table><svg height="15.4" id="M36" style="vertical-align:-3.3907pt" version="1.1" viewbox="0 0 52.150002 15.4" width="52.150002" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> characteristics of three gate stacks. BeO IL shows significant increased drive current compared to SiO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> IL gate stacks.</table>

Active and Passive Electronic Components

fig9

Figure 9

Figure 9: Comparative Study of <svg style="vertical-align:-4.32007pt;width:41.837502px;" id="M1" height="20.4125" version="1.1" viewBox="0 0 41.837502 20.4125" width="41.837502" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.022,0,0,-.022,.062,14.975)"><path id="x53" d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
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Active and Passive Electronic Components

Comparative Study of , , and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

Figure 9