A Unified Channel Charges Expression for Analytic MOSFET Modeling

Table 2

The simplified analytic drain current models.

Physical constants	𝜀𝑆, 𝜀ox,𝐾𝑇/𝑞
Process parameters	𝑁𝐴,𝑡ox,𝜇𝑛,𝑊/𝐿
Device voltages	𝑉𝑔,𝑉𝐷,𝑉𝑆,𝑉fb
Surface potential in 𝑥=0,   𝑦=0	𝑢𝑆(0)
Surface potential	𝑢𝑆(𝑦)=𝑢𝑆,𝑚
Mobility	𝜇𝑛eff(𝑉𝑔,𝑉𝐷)
Drain current from Pao-sah	𝐼𝐷PS(𝑉𝐷)
Gate voltage factors	𝜂(𝑉𝑔),  𝑏(𝑉𝑔)
Analytic expression of drain current	𝐼ap(𝑉𝑔,𝑉𝐷)
Saturation voltage	𝑉𝐷sat
Drain current with saturation	𝐼𝐷22(𝑉𝐷sat,𝑉𝐷)
Channel length modulation	𝐼CLM(𝑉𝐷)
Drain-induced barrier lowering	𝐼CLM+DIBL(𝑉𝐷)