Fabrication and Characterization of New Ti--Al and Ti-–Pt Tunnel Diodes
Figure 1
(a) process flow for native oxidized sample (left) and plasma oxidized sample (right). The top electrode was deposited by the shadow mask technique. The squares of sizes 200 microns, 100 microns, and 50 microns were deposited. (b) structure of MIM tunnel diode and its microscopic top view showing the Pt mesas of sizes 200 μm, 100 μm, and 50 μm squares.
