Fabrication and Characterization of New Ti-𝐓𝐢𝐎_𝟐-Al and Ti-𝐓𝐢𝐎_𝟐–Pt Tunnel Diodes

Table 1

Compares device characteristics of reported MIM diodes in the literature and this paper.

Work	Type of mim diode	Thickness of dielectric (method of deposition)	Sensitivity (V^−1)	𝐼𝑓/𝐼𝑟
	Metal-insulator-metal
Hoofring et al. [7]	Ni-NiO-Au (0.64 μm^2)	2.2 nm (plasma)	4.55	1.1
Krishnan et al. [8]	Ni-NiO-Cr (1 μm^2)	3 nm (reactive sputter)	5	~1.1
Krishnan et al. [9]	Ni-NiO-Cr/Au (100 μm^2-1 μm^2)	3 nm (plasma)	NA	4.5–6
Krishnan et al. [10]	Ni-NiO-Cr/Au (1 μm^2 area)	3 nm (plasma)	7
Krishnan et al. [10]	Ni-NiO-Cr/Au (100 μm^2 area)	3 nm (plasma)	15	NA
This work	Ti-TiO2-Al (21287 μm^2 area)	9 nm (native)	18	6.5