Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

Table 5

Comparison of oscillator performances.

(a)

Technology	𝑓0(GHz)	TB (%)	ℒ{𝑓of𝑓set}; (dBc/Hz)
Si/SiGe [16]	38	not	−55
InGaP/GaAs [17]	40.8	<1%	−95
GaAs [18]	38	not	−104
AlInAs/InGaAs [19]	39	9	−75
AlInAs/InGaAs [20]	38.1	<1%	−85
InP [21]	39.9	<1%	−84
InP (this work)	37.1	not	−80

(b)

Δ𝑓of𝑓set (KHz)	𝑃out (dBm)	FOM (dBc/Hz)
100	2	−53.2
100	5.3	−90.5
1000	11.9	−67.3
100	5	−89.5
100	8.4	−76.8
100	5	−79.6
100	5.18	−74.8