Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="813518.fig.009a" src="https://static-preview.hindawi.com/articles/apec/volume-2013/813518/figures/813518.fig.009a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>Interface equivalent circuit</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="813518.fig.009b" src="https://static-preview.hindawi.com/articles/apec/volume-2013/813518/figures/813518.fig.009b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>Parallel equivalent circuit</td></tr></table></td></tr></table>

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Active and Passive Electronic Components

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Figure 9

Figure 9: Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs 