Research Article
Considerations of Physical Design and Implementation for 5 MHz-100 W LLC Resonant DC-DC Converters
Table 2
The parameters and components.
| | Name | Value |
| | Primary-side GaN-HEMT (EPC2001C) | ON resistance: | 7 mΩ | | Output capacitance: | 430 pF ( V) | | Reverse conduction voltage: | 1.8 V |
| | Secondary-side diode (PDS1040L) | Forward voltage: | 0.3 V | | Diode resistor: | 10 mΩ | | Junction capacitance: | 1 nF |
| | Transformer (core: SY22) | Magnetizing inductance: | 195 nH | | Leakage inductance: | 40.82 nH | | Turns ratio: | 3 | | Coupling coefficient: | 0.9095 |
| | Current transformer (B82801B) | Secondary-side short inductance: | 7 nH |
| | Resonant capacitor (C1608C0G2A152J) | Capacitance: , | 6 nF |
| | Driver (LM5113) | |
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