Research Article
A New Type of Tri-Input TFET with T-Shaped Channel Structure Exhibiting Three-Input Majority Logic Behavior
Figure 5
VGS3 = 1 V and VGS2 = 0 V, energy band distribution and BTBT rate along top and bottom cut lines shown in Figure 1(a) in different switching states, (a) VGS1 = 0 V and (b) VGS1 = 1 V, the inset is an enlarged view of the energy band distribution at the interface between source and channel.
| (a) |
| (b) |