A New Type of Tri-Input TFET with T-Shaped Channel Structure Exhibiting Three-Input Majority Logic Behavior

Table 1

Device parameters.

Device parameters	Optimized values
Source doping profile	1 × 10^20 cm^−3 (P^++)
Drain doping profile	1 × 10^18 cm^−3 (N^++)
Body doping profile	1 × 10^14 cm^−3 (N^−)
Body thickness (TSi)	5 nm
Gate length (LG)	30 nm
Source length (LS)	30 nm
Drain length (LD)	30 nm
Gate dielectric thickness (TGD)	3 nm
Work function of Gate 1	4.05 eV–4.11 eV
Work function of Gate 2	4.05 eV–4.11 eV
Work function of Gate 3	4.05 eV–4.11 eV