Research Article
A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node
| NVM | FERAM [1] | MRAM [2] | PCM [3] | RRAM [4] |
| Read speed | 20–80 ns | 3–20 ns | 20–50 ns | 10–50 ns | Write/erase speed | 50/50 ns | 3–20 ns | 50/120 ns | 10–50 ns | Resistance ratio | >8 | 2 | >10 | >10 | Power consumption | Low | High | Low | Low | Supply voltage | 2-3 V | 3 V | 1.5–3 V | 1.5–3 V | Process compatibility | Incompatible | Low | High | High | Integration | Low | High | High | High |
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