Research Article
A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node
Table 3
Performance comparison of different nvSRAM memory cells.
| | This work | [7] | [9] | [18] | [19] |
| Memory cell | 8T2R | 8T2R | 10T1R | 7T1R | 4T2R | Technology | 28 nm CMOS | 22 nm FDSOI | 130 nm STM | 90 nm CMOS | 90 nm CMOS | Power supply | 0.9 V | 1 V | 1.8 V | 1 V | 4 V | Restoration mode | Differential | Differential | Differential | Single | Differential | Nonvolatile mode | Before power failure | Before power failure | Before power failure | Before power failure | Real time | Store time | 0.21 ns | 0.24 ns | NA | 10 ns (set + reset) | 1.45 ns | Restoration time | 0.18 ns | 0.22 ns | NA | 4 ns | 0.02 ns | Current (when storing data) | 0–200 μA | 0–40 μA | 0–50 μA | NA | 0–230 μA | Voltage (when storing data) | 1.6 V | 1.0 V | 1.8 V | 1.5 V | 1.5 V | Memory cell size | 0.97 μm2 | 5.44 μm2 | 41 μm2 | 1 μm2 | 0.6 μm2 |
|
|