A Process Optimization Method of the Mini-LOCOS Field Plate Profile for Improving Electrical Characteristics of LDMOS Device

Figure 4

TCAD simulation results of different field plate profiles: (a) net doping simulation of the “abrupt” field plate; (b) net doping simulation of the “smooth” field plate; (c) net doping profile from point A to B; (d) electric field of the “abrupt” field plate; (e) electric field of the “smooth” field plate; (f) electric field from point A to B.

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