Research Article
Design of Binary and Ternary Logic Inverters Based on Silicon Feedback FETs Using TCAD Simulator
Table 1
Inverter device parameters.
| Parameters | Value (unit) |
| Total length of channel | 40 nm | Oxide thickness | 0.7 nm | Length of metal | 20 nm | Work function of metal | 4 eV | Channel 1 doping density | | Channel 2 doping density | |
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