Optimally Matched 189-232 GHz 6.8 dBm Output Power CMOS Frequency Doubler

Table 2

Comparison with other reported designs in literature.

	Tech.	Freq. (GHz)	Mult.	DC-RF (%)	Ways	Conv. gain (dB)	(dBm)	Area (mm^2)	(mW)
2016 [4]	90 nm SiGe	220-230	2	0.23	4	4.7	8	3.63	2700
2016 [5]	65 nm CMOS	160-310	2	2.85	1	3	3	0.71	70
2021 [6]	40 nm CMOS	213-233	9	1.39	1	4.1	4.1	1.7	185
2022 [7]	40 nm CMOS	249-266	6	—	4	NA	3	7.3	890
2011 [18]	130 nm SiGe	215-240	2	0.08	1	NA	-3	—	630
2016 [19]	130 nm SiGe	165-230	2	0.87	2	5.2	5.2	N.A	380
2018 [20]	130 nm SiGe	170-220	2	—	2	6.5	6.5	N.A	90
2018 [21]	80 nm InP	220-265	6	—	1	4	5	2	124.8
2019 [22]	130 nm SiGe	220-255	8	1.6	4	18	12	2.15	990
2020 [23]	130 nm SiGe	152-220	4	1.8	1	-1	-1	1.3	45
2022 [24]	130 nm SiGe	220-261	18	1.47	1	15	8	0.58	429
2022 [25]	65 nm CMOS	200-220	2	2.85	1	4.6	4.6	0.106	83
2022 [26]	28 nm CMOS	208-233	2	1.1	1	-7.2	-4.9	0.2	26.4
This work	40 nm CMOS	189-232	2	1.87	1	11.8	6.8	0.795	262