Research Article
Optimally Matched 189-232 GHz 6.8 dBm Output Power CMOS Frequency Doubler
Table 2
Comparison with other reported designs in literature.
| | Tech. | Freq. (GHz) | Mult. | DC-RF (%) | Ways | Conv. gain (dB) | (dBm) | Area (mm2) | (mW) |
| 2016 [4] | 90 nm SiGe | 220-230 | 2 | 0.23 | 4 | 4.7 | 8 | 3.63 | 2700 | 2016 [5] | 65 nm CMOS | 160-310 | 2 | 2.85 | 1 | 3 | 3 | 0.71 | 70 | 2021 [6] | 40 nm CMOS | 213-233 | 9 | 1.39 | 1 | 4.1 | 4.1 | 1.7 | 185 | 2022 [7] | 40 nm CMOS | 249-266 | 6 | — | 4 | NA | 3 | 7.3 | 890 | 2011 [18] | 130 nm SiGe | 215-240 | 2 | 0.08 | 1 | NA | -3 | — | 630 | 2016 [19] | 130 nm SiGe | 165-230 | 2 | 0.87 | 2 | 5.2 | 5.2 | N.A | 380 | 2018 [20] | 130 nm SiGe | 170-220 | 2 | — | 2 | 6.5 | 6.5 | N.A | 90 | 2018 [21] | 80 nm InP | 220-265 | 6 | — | 1 | 4 | 5 | 2 | 124.8 | 2019 [22] | 130 nm SiGe | 220-255 | 8 | 1.6 | 4 | 18 | 12 | 2.15 | 990 | 2020 [23] | 130 nm SiGe | 152-220 | 4 | 1.8 | 1 | -1 | -1 | 1.3 | 45 | 2022 [24] | 130 nm SiGe | 220-261 | 18 | 1.47 | 1 | 15 | 8 | 0.58 | 429 | 2022 [25] | 65 nm CMOS | 200-220 | 2 | 2.85 | 1 | 4.6 | 4.6 | 0.106 | 83 | 2022 [26] | 28 nm CMOS | 208-233 | 2 | 1.1 | 1 | -7.2 | -4.9 | 0.2 | 26.4 | This work | 40 nm CMOS | 189-232 | 2 | 1.87 | 1 | 11.8 | 6.8 | 0.795 | 262 |
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