Research Article

Optimally Matched 189-232 GHz 6.8 dBm Output Power CMOS Frequency Doubler

Table 2

Comparison with other reported designs in literature.

Tech.Freq. (GHz)Mult.DC-RF (%)WaysConv. gain (dB) (dBm)Area (mm2) (mW)

2016 [4]90 nm SiGe220-23020.2344.783.632700
2016 [5]65 nm CMOS160-31022.851330.7170
2021 [6]40 nm CMOS213-23391.3914.14.11.7185
2022 [7]40 nm CMOS249-26664NA37.3890
2011 [18]130 nm SiGe215-24020.081NA-3630
2016 [19]130 nm SiGe165-23020.8725.25.2N.A380
2018 [20]130 nm SiGe170-220226.56.5N.A90
2018 [21]80 nm InP220-26561452124.8
2019 [22]130 nm SiGe220-25581.6418122.15990
2020 [23]130 nm SiGe152-22041.81-1-11.345
2022 [24]130 nm SiGe220-261181.4711580.58429
2022 [25]65 nm CMOS200-22022.8514.64.60.10683
2022 [26]28 nm CMOS208-23321.11-7.2-4.90.226.4
This work40 nm CMOS189-23221.87111.86.80.795262