Metallisation and Interconnection of e-Beam Evaporated Polycrystalline Silicon Thin-Film Solar Cells on Glass
Figure 6
DLIT images for the cell with baked photoresist as the isolation material taken at the forward bias condition: 400 mV, lock-in frequency: 10 Hz, scale: −0.1 mK to 1 mK; (a) image is for the 2-cell minimodule on the left biased between points 1 and 2; (b) image is for the 4-cell minimodule on the right biased between points 3 and 4.
