Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching
Figure 11
Contact resistances of RJSNWs of lengths 600, 900, and 10000 nm. Etching conditions were aqueous AgNO3/HF/H2O mixture chemical solution in a ratio of 4 : 34 : 162 (volume) at 25°C for (a) 1.5, (b) 3, and (c) 30 min.
