Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching
Figure 4
SEM images of various SNW/p-Si(100) structures. Etching conditions were aqueous AgNO3/HF/H2O mixture chemical solution in a ratio of 4 : 34 : 162 (volume) at 25°C for (a) 1.5, (b) 1.5 (enlargement of (a)), (c) 3, and (d) 30 min. The concentration of AgNO3 was 1 mol L−1. Lengths of SNW arrays were 600, 900, and 10000 nm, respectively.