Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

Figure 7

Profile of phosphorus concentration in RJSNW/p-type Si(100) solar cell, determined by secondary ion mass spectroscopy (SIMS). SNW/p-type Si(100) structures were formed by diffusion of phosphorus at 950°C for 3 hrs.