Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching
Figure 8
Current density-voltage (J-V) curves of various dark and illuminated (AM 1.5) RJSNW solar cells. Etching conditions were aqueous AgNO3/HF/H2O mixture chemical solution in a ratio of 4 : 34 : 162 (volume) at 25°C for (a) 1.5, (b) 3, and (c) 30 min. Lengths and cross-section sizes of SNW arrays were 600 nm and 300–1000 nm, respectively. SNW/p-type Si(100) structures were formed by diffusion of phosphorus at 950°C for 2.5, 3, 4, and 5 hrs, respectively.
