Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching
Figure 9
J-V curves of various illuminated (AM 1.5) n-type SNW/p-Si(100) solar cells with SNW array lengths of 600, 900, and 10000 nm. Etching conditions were aqueous AgNO3/HF/H2O mixture chemical solution in a ratio of 4 : 34 : 162 (volume) at 25°C for (a) 1.5, (b) 3, and (c) 30 min. All SNW/p-Si(100) structures were formed by diffusion of phosphorus at 950°C for 3 hrs.
