Heteroepitaxial Growth of Ge Nanowires on Si Substrates

Figure 1

(a) Top view SEM image of an Si substrate covered with Au evaporated at room temperature and Ge evaporated at 480°C; native SiO₂ has not been removed before Ge evaporation. (b) Cross-section SEM image of the sample shown in (a). The 2D Ge layer on Si substrate is clearly visible.

(a)

(b)