Heteroepitaxial Growth of Ge Nanowires on Si Substrates
Figure 5
(a) Plan-view SEM image of a sample deposited with 2 nm-thick Au layer and sequent annealed at 700°C for two hours. (b) Plan-view SEM image of a sample in which the same gold thickness has been evaporated directly at the same NWs growth temperature of 480°C.
