Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-Si
Figure 3
J-V characteristics for Al/PANI-DBSA/n-Si heterojunctions under illumination (0.09 W/cm2) using Au or Ag as Ohmic contact. The solid line represents the expected J-V behaviors.
