The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se<sub>2</sub> Absorber Layers Prepared by Annealing Stacked Metallic Precursors

<table>The XRD patterns of the In/Cu-Ga precursor produced using an In deposition time of 120 min. JCPDS: Cu<sub>2</sub>In (00-026-0552), Cu<sub>3</sub>Ga (00-044-1117), and In (03-065-9292).</table>

International Journal of Photoenergy

fig3

Figure 3

Figure 3: The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se<sub>2</sub> Absorber Layers Prepared by Annealing Stacked Metallic Precursors 

Figure 3 | The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors 