The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,Ga)Se₂ Absorber Layers Prepared by Annealing Stacked Metallic Precursors

Figure 8

Cross-sectional and top-view SEM images of CIGS films made using (a), (b) the lowest (60°C/min), (c) and (d) 120°C/min, and (e) and (f) the highest heating rate (240°C/min).

(a)

(b)

(c)

(d)

(e)

(f)