Optimization of μc-Si_1−xGe_x:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality

Figure 5

(a) EQE of single-junction cells using μc-Si_1−xGe_x:H absorbers deposited at different RF power of 100 W (line with open triangle), 70 W (dash line), 60 W (solid line), and 50 W (grey line). The EQE for μc-Si:H cell was represented by the line with open circle. (b) The EQE with −1 V bias and 0 V for the cell using the μc-Si_1−xGe_x:H absorber deposited at 50 W.

(a)

(b)