Research Article

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Table 1

Thermophysical properties of materials.

MaterialVariableValue

QuartzDensity (kg/m3)1930
Specific heat (J/kg⋅K)1059
Thermal conductivity (W/m⋅K)2–6
Emissivity0.6

GraphiteDensity (kg/m3)1790
Specific heat (J/kg⋅K)1800
Thermal conductivity (W/m⋅K)140
Emissivity0.8

Carbon feltDensity (kg/m3)160
Specific heat (J/kg⋅K)
Thermal conductivity (W/m⋅K)
Emissivity0.8

Stainless steelDensity (kg/m3)7900
Specific heat (J/kg⋅K)477
Thermal conductivity (W/m⋅K)15
Emissivity0.22

SiliconDensity (kg/m3)2450
Specific heat (J/kg⋅K)1059 (<1685 K), 1000 (>1685 K)
Thermal conductivity (W/m⋅K)24 (<1685 K), 64 (>1685 K)
Dynamic viscosity (kg/m⋅s)7 × 10−4
Thermal expansion coefficient (1/K)1.4 × 10−4
Latent heat (J/kg)1.4 × 106
Melting point (K)1685

ArgonSpecific heat (J/kg⋅K)521
Thermal conductivity (W/m⋅K)
Dynamic viscosity (kg/m⋅s)