Research Article
Effect of Different HTM Layers and Electrical Parameters on ZnO Nanorod-Based Lead-Free Perovskite Solar Cell for High-Efficiency Performance
Table 1
Parameters used for simulation of perovskite solar cell structures using SCAPS-1D.
| | Parameters | ZnO nr | CH3NH3SnI3 | CH3NH3PbI3 | Cu2O | Spiro-OMeTAD | CuSCN |
| | Thickness (nm) | 500 [10] | 450 (variable) | 450 | 350 | 350 | 350 | | Bandgap (eV) | 3.47 [10] | 1.30 | 1.50 | 2.17 | 3.2 | 3.4 | | Electron affinity (eV) | 4.3 [11] | 4.20 | 3.9 | 3.2 | 2.1 | 2.1 | | Dielectric permittivity (relative) | 9 [12] | 10 | 10 | 7.1 | 3 | 10 | | CB effective density of states (1/cm3) | 2E+18 | 1.0E+18 | 2.25E+18 | 2.50E+18 | 2.5E+18 | 2.5E+18 | | VB effective density of states (1/cm3) | 1.8E+20 | 1.0E+18 | 1.0E+18 | 1.80E+19 | 1.8E+19 | 1.8E+19 | | Electron thermal velocity (cm/s) | 1E+7 | 1E+7 | 1.0E+7 | 1E+7 | 1.0E+7 | 1E+7 | | Hole thermal velocity (cm/s) | 1E+7 | 1E+7 | 1.0E+7 | 1E+7 | 1.0E+7 | 1E+7 | | Electron mobility (cm2/Vs) | 1.0E+2 | 1.6E+0 | 2.20E+0 | 2.0E+2 | 2.0E−4 | 2.0E−4 | | Hole mobility (cm2/Vs) | 2.5E+1 | 1.6E+0 | 2.20E+0 | 8.0E+2 | 2.0E−4 | 100E−2 | | Shallow uniform acceptor density, NA (1/cm3) | 0 | 3.2E+15 | 1.0E+18 | 9.0E+21 | 1.0E+20 | 1E+18 | | Shallow uniform donor density ND (1/cm3) | 1E+19 | 0 | 0 | 0 | 0 | 0 | | Defect type | — | Neutral | Neutral | Neutral | Neutral | Neutral | | Capture cross section electrons (cm2) | — | 1E−16 | 1E−13 | 1E−15 | 1E−15 | 1E−15 | | Capture cross section holes (cm2) | — | 1E−14 | 1E−13 | 1E−15 | 1E−15 | 1E−15 | | Energetic distribution | — | Single | Single | Single | Single | Single | | Reference for defect energy level Et | — | Above Ev | Above Ev | Above Ev | Above Ev | Above Ev | | Energy level with respect to reference (eV) | — | 0.7 | 0.7 | 0.10 | 0.10 | 0.10 | | Nt total (1/cm3) uniform | — | 4.5E+16 | 1E+12 | 1E+14 | 1.00E+14 | 1E+14 |
|
|
