Performance Analysis of Ti-Doped In<sub>2</sub>O<sub>3</sub> Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device

<div>The SEM images of physical characteristics of ITiO films of different doping concentrations from Ti-0.5 wt% to Ti-5.0 wt%.</div>

International Journal of Photoenergy

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Figure 4

Figure 4: Performance Analysis of Ti-Doped In<sub>2</sub>O<sub>3</sub> Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device 

Figure 4 | Performance Analysis of Ti-Doped In2O3 Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device 