Research Article
Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell
Table 1
Input parameters in SCAPS-1D.
| | Parameters | -(a-SiOx) | Buffer layer | -(a-Si:H) | -(a-Si:H) | ITO |
| | Thickness (μm) | 0.500 | 0.004 | 0.350 | 0.025 | 0.060 | | Bandgap energy (eV) | 1.950 | 1.800 | 1.800 | 1.800 | 3.650 | | Electron affinity (eV) | 4.000 | 3.900 | 3.900 | 3.900 | 4.800 | | Dielectric permittivity (relative) | 9.000 | 11.900 | 11.900 | 11.900 | 8.900 | | CB effective density of states (cm-3) | | | | | | | VB effective density of states (cm-3) | | | | | | | Electron thermal velocity (cm/s) | 107 | 106 | 106 | 107 | | | Hole thermal velocity (cm/s) | 107 | 106 | 106 | 107 | | | Electron mobility (cm2/Vs) | 5.0 | 50 | 20 | 30 | 50 | | Hole mobility (cm2/Vs) | 1.0 | 10 | 5.0 | 5.0 | 25 | | Donor density (cm-3) | 0.0 | 0.0 | | | | | Acceptor density (cm-3) | | | | 0.0 | 0.0 | | Absorption coefficient | SCAPS | SCAPS | SCAPS | SCAPS | SCAPS |
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