Research Article
Full Silicon Tandem Solar Cells Based on Vertically Aligned Nanostructures
Table 1
Parameters of the layers of the tandem a-Si:H/c-Si SC.
| | Material | (eV) | Thickness (μm) | Doping level (cm -3) | Fermi level position (eV) | Electron affinity (eV) |
| | (p) a-SiC:H | 1.9 | 0.01 | | 0.4 | 3.8 | | (i) a-Si:H | 1.72 | 0.2 | | 0.85 | 3.9 | | (n) a-Si:H | 1.72 | 0.03 | | 0.3 | 3.9 | | Tunnel diode | | | (p) a-Si:H | 1.72 | 0.02 | | 0.4 | 3.9 | | (n) c-Si (wire) | 1.12 | Diameter 0.5–2; height 2–30 | 1015-1017 | 0.1-0.28 | 4.05 | | (n) a-Si:H | 1.72 | 0.02 | | 0.3 | 3.9 |
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