An Improved Topology of Isolated Bidirectional Resonant DC-DC Converter Based on Wide Bandgap Transistors for Electric Vehicle Onboard Chargers

Table 2

Loss comparison of the proposed converter.

Utilized switching device	Total conduction loss (W)	Total switching loss (W)
E-mode GaN HEMT by GaN Systems Inc [29]	167.79	8.85
E-mode planar SiC MOSFET by Cree Inc [30]	182.82	61.88
Trench structure SiC MOSFET by ROHM Semiconductor [31]	124.98	121.55
Si power MOSFET by Infineon Technologies [32]	158.40	58.70
Field stop trench Si IGBT by ROHM Semiconductor [33]	73.40	305.64