Quantitative Analysis and Band Gap Determination for CIGS Absorber Layers Using Surface Techniques

Figure 5

Determined band gap of the CIGS absorber layers from Ga/(In + Ga): (a) atomic ratios of Ga/(In + Ga) from AES; (b) band gap profiles calculated from AES; (c) atomic ratios of Ga/(In + Ga) from SIMS; (d) band gap profiles calculated from SIMS. Sputter time for each profile has been normalized to 100; actual sputter times varied from 65 to 95 min.

(a)

(b)

(c)

(d)