Galvanic Displacement of Gallium Arsenide Surface: A Simple and Low-Cost Method to Deposit Metal Nanoparticles and Films
Figure 2
SEM images of GaAs (100) substrates immersed in dilute HAuCl4 solution. HAuCl4 concentration and deposition duration were (a) 0.7 mM; 20 s, (b) 1.0 mM; 30 s, and (c) 1.0 mM; 60 min.
