Research Article

Pulse Electrodeposition of Palladium Nanoparticles onto Silicon in DMSO

Table 1

Conditions for the formation of noble metal nanoparticles on the silicon surface by electrodeposition method.

MetalType of siliconThe composition of the solutionCondition of depositionMetal sedimentsRef.
icathodeE

Agn-Si(643)Commercial cyanide-based silver plating solution (KROHN)10 mA/cm2Epitaxial film[9]
n-Si(111)5 mM AgCN, 0.2 M KCN, 0.5 M KOH−0.80…−0.90 V vs. SHE100…300 nm particles[11]
Microporous p-Si(100)0.1 M AgNO3 + 0.5 M KNO36.4 μA/cm2Deposit in silicon pores[12]
Aun-Si(643)0.1 mM HAuCl4, 1 mM KCl, 1 mM H2SO4, 100 mM K2SO4−1.9 V vs. Ag/AgClEpitaxial film[9]
p-type Si wafers(100)(0.1 or 0.01 M)HAuCl4 in 0.5 M NaCl or 0.5 M Na2SO40 V vs. Ag/AgClDeposit in silicon pores[13]
n-Si (100)(2, 50 mM) KAu(CN)2 + (0.2, 1.0 M) KCN(−1.2…−1, 7) V vs. Ag/AgClHemispherical clusters[14]
n-Si(100)Neutronex® 309 Au solution, a sulfite-based Au chemistry + thallium(I) acetate1, 5, 10 mA/cm2−1.1 V vs. SCEParticles ∅ 30…200 nm[15]
H–Si(111)(1) 10−4 M HAuCl4 + 0.1 M K2SO4; (2) 10−4 M KAu(CN)2 + 2·10−4 M NaCN + 2 M NaOH−2.0 VIslands 4…30 nm[16]
n-Si(100)Sulphite/thiosulphate electrolytic bathsConstant potential, constant current, cyclic voltammetry and pulsating overpotentialBulk deposits[17]
p-Si(100)1 mM KAu(CN)2 + 0.25 M K2CO3−1.0…−1.4 V vs. Ag/AgClParticles ∅ <100 nm[18]
Ptn-Si(643)0.5 M NaCl, 3 mM K2PtCl4; pH = 4−0.58 V vs. Ag/AgClEpitaxial film[9]
p-Si(100)(0.1 or 0.01 M)H2PtCl6 in 0.5 M NaCl or 0.5 M Na2SO4−0.4 or −0.8 V vs. Ag/AgClDeposit in silicon pores[13]
Microporous p-Si(100)0.1 M K2PtCl4 + 0.5 M NaCl6.4 μA/cm2Deposit in silicon pores[12]
p-Si(100)10−2 M Na2PtCl6 + 0.5 M H2SO4CVA between −300 and 100 mV100…300 nm particles[19]
n-Si(1 1 1):H1 mM H2PtCl6 + 0.1 M K2SO4−0.35 V vs. Ag/AgClNanofilms, nanoparticles[20]
n-Si(100) p-Si(100)(0.03…2.5)mM PtCl42− + 2 M HF(0.035…0.15) mA/cm2Islands <100 nm[21]
Pt/SiNWs array1 g/L H2PtCl6, pH = 2.0 (by HCl)Pulse electrodeposition (−0.35 V vs. Ag/AgCl): τoff/τoff = 25/100 msFlower-like Pt-nanoclusters[22]
Pdp-Si (100)(0.1 or 0.01 M)PdCl2 + 0.2 M HCl + 1.0 M NaCl or 0.5 M Na2SO4−0.4 or −0.8 V vs. Ag/AgClDeposit in silicon pores[13]
Microporous p-Si (100)0.1 M PdCl2 + 0.2 M HCl + 0.5 M NaCl10 mA/cm2−0.4 V vs. Ag/AgClDeposit in silicon pores[23]
Scratches on p-Si (100)0.01 g/l PdCl2 + 0.1 M HCl0.0, 0.2, 0.4 V vs. Ag/AgClSub-100 nm lines[24]
Run-Si(100)4 mM RuCl3 in BMIPF6−1.4…−2.0 V vs. Pt/Pt(II)∼100 nm films[25]
p-Si (100), p-Si (111), n-Si (100)0.16 mM K2RuCl5 + 0.18 M H2SO41…20 mA/cm2vs. Ag/AgCl∅ 20−30 nm hemispherical shape[26]
Irn-Si(111)10 mM IrCl3 + 0.5 M KCl + 5% isopropanol. pH = 2.2−0.9 V SCE5–10 nm nanoislands[27]
Rep-Si(100)10 mM NH4ReO4, pH = 2 (H2SO4)CV (between 0.50 and 0.65 V)Nanofilm[28]