[Retracted] Topological Attributes of Silicon Carbide SiC<sub>4</sub>-II[<italic>i</italic>, <italic>j</italic>] Based on Ve-Degree and Ev-Degree

<div>(a) Ev-deg M-index and (b) first ve-deg Zagreb alpha index.</div>

Journal of Chemistry

fig3

Figure 3

Figure 3: [Retracted] Topological Attributes of Silicon Carbide SiC<sub>4</sub>-II[<italic>i</italic>, <italic>j</italic>] Based on Ve-Degree and Ev-Degree 

Journal of Chemistry

[Retracted] Topological Attributes of Silicon Carbide SiC4-II[i, j] Based on Ve-Degree and Ev-Degree

Figure 3

[Retracted] Topological Attributes of Silicon Carbide SiC₄-II[i, j] Based on Ve-Degree and Ev-Degree