[Retracted] Topological Attributes of Silicon Carbide SiC<sub>4</sub>-II[<italic>i</italic>, <italic>j</italic>] Based on Ve-Degree and Ev-Degree

<div>(a) First ve-deg M-beta index and (b) second ve-deg M-index.</div>

Journal of Chemistry

fig4

Figure 4

Figure 4: [Retracted] Topological Attributes of Silicon Carbide SiC<sub>4</sub>-II[<italic>i</italic>, <italic>j</italic>] Based on Ve-Degree and Ev-Degree 

Journal of Chemistry

[Retracted] Topological Attributes of Silicon Carbide SiC4-II[i, j] Based on Ve-Degree and Ev-Degree

Figure 4

[Retracted] Topological Attributes of Silicon Carbide SiC₄-II[i, j] Based on Ve-Degree and Ev-Degree