[Retracted] Topological Attributes of Silicon Carbide SiC<sub>4</sub>-II[<italic>i</italic>, <italic>j</italic>] Based on Ve-Degree and Ev-Degree

<div>(a)Ve-deg-based R-index and (b) ev-deg-based R-index.</div>

Journal of Chemistry

fig5

Figure 5

Figure 5: [Retracted] Topological Attributes of Silicon Carbide SiC<sub>4</sub>-II[<italic>i</italic>, <italic>j</italic>] Based on Ve-Degree and Ev-Degree 

Journal of Chemistry

[Retracted] Topological Attributes of Silicon Carbide SiC4-II[i, j] Based on Ve-Degree and Ev-Degree

Figure 5

[Retracted] Topological Attributes of Silicon Carbide SiC₄-II[i, j] Based on Ve-Degree and Ev-Degree