[Retracted] Topological Attributes of Silicon Carbide SiC<sub>4</sub>-II[<italic>i</italic>, <italic>j</italic>] Based on Ve-Degree and Ev-Degree

<div>(a) Ve-deg-based ABC-index and (b) ve-degree-based GA-index.</div>

Journal of Chemistry

fig6

Figure 6

Figure 6: [Retracted] Topological Attributes of Silicon Carbide SiC<sub>4</sub>-II[<italic>i</italic>, <italic>j</italic>] Based on Ve-Degree and Ev-Degree 

Journal of Chemistry

[Retracted] Topological Attributes of Silicon Carbide SiC4-II[i, j] Based on Ve-Degree and Ev-Degree

Figure 6

[Retracted] Topological Attributes of Silicon Carbide SiC₄-II[i, j] Based on Ve-Degree and Ev-Degree