[Retracted] Topological Attributes of Silicon Carbide SiC<sub>4</sub>-II[<italic>i</italic>, <italic>j</italic>] Based on Ve-Degree and Ev-Degree

<div>(a) Ve-deg-based harmonic index and (b) ve-deg-based sum connectivity index.</div>

Journal of Chemistry

fig7

Figure 7

Figure 7: [Retracted] Topological Attributes of Silicon Carbide SiC<sub>4</sub>-II[<italic>i</italic>, <italic>j</italic>] Based on Ve-Degree and Ev-Degree 

Journal of Chemistry

[Retracted] Topological Attributes of Silicon Carbide SiC4-II[i, j] Based on Ve-Degree and Ev-Degree

Figure 7

[Retracted] Topological Attributes of Silicon Carbide SiC₄-II[i, j] Based on Ve-Degree and Ev-Degree