Design Consideration for High Step-Up Nonisolated Multicellular dc-dc Converter for PV Micro Converters

Table 3

Parameters for switching energy calculation.

Circuit parasitic parameters
Total parasitic inductance	22.5 nH
Parasitic capacitances ,	10 pF, 30 pF
Common inductance	1 nH
Gate inductance	3 nH
Gate resistance	3 Ω
GaN-HEMT , for free-wheeling diode
On-resistance	150 mΩ
Output capacitance	110 pF @ 100 V
Breakdown voltage	600 V
GaN-FET
On-resistance	50 mΩ
Output capacitance	110 pF @ 100 V
Breakdown voltage	200 V