A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel

Figure 2

The fabrication flow of the PSF-TiFET device. (a) Formation of a right sidewall of the Si-fin channels, (b) the formation of high-K dielectric layer on the right sidewall, (c) formation of another left sidewall of the Si-fin channels, (d) formation of the gate oxide of the front gate on the left sidewall, (e) TiN deposition, (f) gate separation by RIE, (g) formation of the oxide layer on the top gate, (h) formation of a horizontal channel by using smart-cut processing, and (i) formation of the high-K dielectric layer and the top gate.