A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel

Table 1

The optimized parameters of PSF-TiFET.

Parameter	Value
Source doping (Ns)	2 × 10^19 cm^−3
Gate length ()	24 nm
Fin height 2 (Hfin2)	43 nm
Body thickness (Tsi)	6 nm
Drain doping (Nd)	2 × 10^19 cm^−3
Fin height 1 (Hfin1)	40 nm
Gate oxide thickness (Tox)	2 nm
Gate work function (Φm)	4.70 eV (N-type)
	4.85 eV (P-type)