Design and Development of Efficient SRAM Cell Based on FinFET for Low Power Memory Applications

Table 2

Performance and reliability of 6T and 8T AUF SRAM [29, 30].

AUF SRAM designs		6T SRAM	8T SRAM
Supply voltage		500 mV
Standby leakage power (nW)		2.71	2.98
Read	Delay (ns)	2.25	2.85
	Power (nW)	2.415	2.764
Write	Delay (ns)	0.65	0.75
	Power (nW)	2.512	2.109
Static noise margins	HSNM (mV)	181.3	185.8
	RSNM (mV)	135.6	180.2
	WSNM (mV)	420.4	436.2
N-curve	SVNM (mV)	206.79	228.06
	SINM (µA)	84.74	93.02
	WTV (mV)	255.29	271.94
	WTI (µA)	−11.98	−28.49