Design and Development of Efficient SRAM Cell Based on FinFET for Low Power Memory Applications

Table 3

Parameters for 16 nm FinFET.

Parameter	Mathematical value
VDD	0.8 V
IGF	15 nm
IGB	16 nm
TOXF	1.30 nm
TOXB	1.30 nm
TSI	8.5 nm
HFIN	24 nm
HGF	24 nm