The Energy Spectrum of Carriers between Two Concentric Spheres of Kane-Type Semiconductors

Babayev, Arif; Cakmaktepe, Sukru; Turkoz, Deniz

doi:https://doi.org/10.1155/JNM/2006/57519

Journal of Nanomaterials

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Volume 2006 | Article ID 057519 | https://doi.org/10.1155/JNM/2006/57519

The Energy Spectrum of Carriers between Two Concentric Spheres of Kane-Type Semiconductors

Arif Babayev,^1,2Sukru Cakmaktepe,²and Deniz Turkoz²

Academic Editor: Michael Harris

Received04 Oct 2005

Accepted23 Feb 2006

Published04 Apr 2006

Abstract

The electronic states of carriers between two concentric spheres of Kane-type semiconductor are theoretically investigated and compared with the results of the parabolic band approximation. Calculations are performed for a hard-wall confinement potential and the eigenstates and the eigenvalues of the Kane Hamiltonian are obtained. Taking into account the real band structure (strong spin-orbital interaction, narrow band gap), the size dependence of the energy of electrons, light holes, and spin-orbital splitting holes in InSb semiconductor concentric spheres are calculated. According to the obtained results both in parabolic and nonparabolic (Kane model) cases, the electron energy levels come close to each other with the increasing of the radius.

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Copyright

Copyright © 2006 Arif Babayev et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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