The Influences of Thickness on the Optical and Electrical Properties of Dual-Ion-Beam Sputtering-Deposited Molybdenum-Doped Zinc Oxide Layer

Table 1

Deposition parameters for SiO₂ buffer layer.

Parameter	Composition, setting
Target material	4N SiO2
Working pressure (Pa)	0.67
Substrate temperature (°C)	130
Film growth rate (nm/s)	0.05
Film thickness (nm)	70